onsemi AFGB40T65SQDN
Manufacturer:
onsemi
Mfr. Part #:
AFGB40T65SQDN
Package:
D2PAK
Customer #:
Key Attributes:
IGBT 650V 80A D2PAK
Description:
IGBT 650V 80A 238W Surface Mount D2PAK
Datasheet:
onsemi AFGB40T65SQDN
Products Specifications
Manufacturer:
Package:
D2PAK
Td(off):
75.2ns
Pd - Power Dissipation:
238W
Td(on):
17.6ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
9pF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.6V@40mA
Gate Charge(Qg):
76nC@15V
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
131ns
Switching Energy(Eoff):
229uJ
Turn-On Energy (Eon):
858uJ
Input Capacitance(Cies):
2.495nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
50pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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