onsemi HGTD1N120BNS9A
Manufacturer:
onsemi
Mfr. Part #:
HGTD1N120BNS9A
Package:
TO-252AA
Customer #:
Key Attributes:
IGBT 1.2kV 5.3A TO-252AA
Description:
IGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
Datasheet:
onsemi HGTD1N120BNS9A
Products Specifications
Manufacturer:
Package:
TO-252AA
Td(off):
67ns
Pd - Power Dissipation:
60W
Td(on):
15ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@50uA
Gate Charge(Qg):
14nC
Operating Temperature:
-55℃~+150℃@(Tj)
Switching Energy(Eoff):
90uJ
Turn-On Energy (Eon):
70uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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