HUAYI HYG060N08NS1P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG060N08NS1P
Package:
TO-220FB-3
Customer #:
Description:
80V 105A 6mΩ@10V 4V@250uA 1 N-channel 125W TO-220FB-3 Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG060N08NS1P
Products Specifications
Manufacturer:
Package:
TO-220FB-3
Drain to Source Voltage:
80V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.95nF@25V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
48nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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