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HUAYI HYG060P04LQ1D

HUAYI HYG060P04LQ1D

Name: HUAYI HYG060P04LQ1D
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG060P04LQ1D

Package: TO-252-2

Customer #:

Key Attributes: P-Channel Enhancement Mode MOSFET, Current: -70A, Voltage: -40V

Description: 40V 70A 10.5mΩ@4.5V 3V@250uA 1 N-channel 65W TO-252-2 Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG060P04LQ1D

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-252-2

Drain to Source Voltage:

40V

Current - Continuous Drain(Id):

70A

Operating Temperature -:

-55℃~+175℃

RDS(on):

10.5mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

403pF

Number:

1 N-channel

Output Capacitance(Coss):

431pF

Input Capacitance(Ciss):

6.774nF

Pd - Power Dissipation:

65W

Gate Charge(Qg):

128nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	2500
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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