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HUAYI HYG025P03LQ1B

HUAYI HYG025P03LQ1B

Name: HUAYI HYG025P03LQ1B
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG025P03LQ1B

Package: TO-263-2

Customer #:

Key Attributes: P-Channel Enhancement Mode MOSFET, Current: -190A, Voltage: -30V

Description: 30V 190A 4.2mΩ@4.5V 3V@250uA 200W TO-263-2 Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG025P03LQ1B

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-263-2

Drain to Source Voltage:

30V

Current - Continuous Drain(Id):

190A

Operating Temperature -:

-55℃~+175℃

RDS(on):

4.2mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

1.314nF@25V

Number:

Output Capacitance(Coss):

1.254nF

Input Capacitance(Ciss):

14.22nF

Pd - Power Dissipation:

200W

Gate Charge(Qg):

280nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	800
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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