HUAYI HYG035N06LS1D
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG035N06LS1D
Package:
TO-252-2
Customer #:
Key Attributes:
Single N-Channel, Current:150A, Voltage:65V
Description:
65V 150A 6mΩ@4.5V 3V@250uA 1 N-channel 183W TO-252-2 Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG035N06LS1D
Products Specifications
Manufacturer:
Package:
TO-252-2
Drain to Source Voltage:
65V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.687nF
Pd - Power Dissipation:
183W
Gate Charge(Qg):
76.3nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
Recommended Products