HUAYI HY3410NA2P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HY3410NA2P
Package:
TO-220FB-3
Customer #:
Key Attributes:
N-Channel Enhancement Mode MOSFET, Current:140A, Voltage:100V
Description:
100V 140A 7mΩ@10V 4V@250uA 1 N-channel 288W TO-220FB-3 Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HY3410NA2P
Products Specifications
Manufacturer:
Package:
TO-220FB-3
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
294pF
Number:
1 N-channel
Output Capacitance(Coss):
426pF
Input Capacitance(Ciss):
6.835nF
Pd - Power Dissipation:
288W
Gate Charge(Qg):
133nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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