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HUAYI HYG190P13NA1B

HUAYI HYG190P13NA1B

Name: HUAYI HYG190P13NA1B
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG190P13NA1B

Package: TO-263-2

Customer #:

Key Attributes: P-Channel Enhancement Mode MOSFET, Current: -72A, Voltage: -125V

Description: 125V 72A 24mΩ@10V 3.5V@250uA 1 P-Channel 230W TO-263-2 Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG190P13NA1B

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-263-2

Drain to Source Voltage:

125V

Current - Continuous Drain(Id):

72A

Operating Temperature -:

-55℃~+175℃

RDS(on):

24mΩ@10V

Gate Threshold Voltage (Vgs(th)):

3.5V@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

430pF

Number:

1 P-Channel

Output Capacitance(Coss):

572pF

Input Capacitance(Ciss):

8.348nF

Pd - Power Dissipation:

230W

Gate Charge(Qg):

160nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	800
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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