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HUAYI HYG018N10NS1B6

HUAYI HYG018N10NS1B6

Name: HUAYI HYG018N10NS1B6
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG018N10NS1B6

Package: TO-263-6

Customer #:

Key Attributes: N-Channel Enhancement Mode MOSFET, Current:322A, Voltage:100V

Description: 100V 322A 1.7mΩ@10V 4V@250uA 1 N-channel 375W TO-263-6 Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG018N10NS1B6

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-263-6

Drain to Source Voltage:

100V

Current - Continuous Drain(Id):

322A

Operating Temperature -:

-55℃~+175℃

RDS(on):

1.7mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

208pF

Number:

1 N-channel

Output Capacitance(Coss):

5.45nF

Input Capacitance(Ciss):

12.57nF

Pd - Power Dissipation:

375W

Gate Charge(Qg):

205nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	800
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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