HUAYI HY4008B6
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HY4008B6
Package:
TO-263-6
Customer #:
Key Attributes:
N-Channel Enhancement Mode MOSFET, Current: 255A, Voltage: 80V
Description:
80V 255A 3.2mΩ@10V 4V@250uA 375W TO-263-6 Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HY4008B6
Products Specifications
Manufacturer:
Package:
TO-263-6
Drain to Source Voltage:
80V
Current - Continuous Drain(Id):
255A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
822pF@25V
Number:
-
Input Capacitance(Ciss):
7.457nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
209nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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