HUAYI HYG035N06LS1C2
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG035N06LS1C2
Package:
PDFN-8(5.9x5.2)
Customer #:
Key Attributes:
Single N-Channel, Current: 90A, Voltage: 65V
Description:
65V 90A 6mΩ@4.5V 3V@250uA 1 N-channel 56W PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG035N06LS1C2
Products Specifications
Manufacturer:
Package:
PDFN-8(5.9x5.2)
Drain to Source Voltage:
65V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
112pF
Number:
1 N-channel
Output Capacitance(Coss):
1.61nF
Input Capacitance(Ciss):
3.687nF
Pd - Power Dissipation:
56W
Gate Charge(Qg):
76nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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