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HUAYI HYG092N10LS1C2

HUAYI HYG092N10LS1C2

Name: HUAYI HYG092N10LS1C2
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HYG092N10LS1C2

Package: PDFN-8(5.9x5.2)

Customer #:

Key Attributes: Single N-Channel, Current: 60A, Voltage: 100V

Description: 100V 60A 14mΩ@4.5V 3V@250uA 1 N-channel 62.5W PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS

Datasheet: HUAYI HYG092N10LS1C2

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

PDFN-8(5.9x5.2)

Drain to Source Voltage:

100V

Current - Continuous Drain(Id):

60A

Operating Temperature -:

-55℃~+175℃

RDS(on):

14mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

3V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

12.4pF

Number:

1 N-channel

Output Capacitance(Coss):

437pF

Input Capacitance(Ciss):

2.348nF

Pd - Power Dissipation:

62.5W

Gate Charge(Qg):

47nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	5000
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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