onsemi FGL60N100BNTDTU
Manufacturer:
onsemi
Mfr. Part #:
FGL60N100BNTDTU
Package:
TO-264-3
Customer #:
Key Attributes:
IGBT 1kV 60A TO-264-3
Description:
IGBT 1kV 60A 180W Through Hole TO-264-3
Datasheet:
onsemi FGL60N100BNTDTU
Products Specifications
Manufacturer:
Package:
TO-264-3
Td(off):
630ns
Pd - Power Dissipation:
180W
Td(on):
140ns
Collector-Emitter Breakdown Voltage (Vces):
1kV
Reverse Transfer Capacitance (Cres):
200pF
Input Capacitance(Cies):
6nF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@60mA
Gate Charge(Qg):
275nC@15V
Operating Temperature:
-55℃~+150℃@(Tj)
Output Capacitance(Coes):
260pF
Reverse Recovery Time(trr):
1.2us
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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