HUAYI HYG060N08NS1D
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG060N08NS1D
Package:
TO-252-2L
Customer #:
Key Attributes:
MOSFET N-CH 80V 80A TO-252-2L
Description:
N-Channel 80V 80A 75W Surface Mount TO-252-2L
Datasheet:
HUAYI HYG060N08NS1D
Products Specifications
Manufacturer:
Package:
TO-252-2L
Drain to Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
1.15nF
Input Capacitance(Ciss):
2.96nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
48nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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