HUAYI HYG110P04LQ2C2
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG110P04LQ2C2
Package:
PDFN-8(5.9x5.2)
Customer #:
Key Attributes:
MOSFET P-CH 40V 55A PDFN-8(5.9x5.2)
Description:
P-Channel 40V 55A 62.5W Surface Mount PDFN-8(5.9x5.2)
Datasheet:
HUAYI HYG110P04LQ2C2
Products Specifications
Manufacturer:
Package:
PDFN-8(5.9x5.2)
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Output Capacitance(Coss):
253pF
Input Capacitance(Ciss):
4.468nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
76nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
Recommended Products