HUAYI HYG067N07NQ1D
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG067N07NQ1D
Package:
TO-252-2L
Customer #:
Key Attributes:
MOSFET N-CH 68V 70A TO-252-2L
Description:
N-Channel 68V 70A 86W Surface Mount TO-252-2L
Datasheet:
HUAYI HYG067N07NQ1D
Products Specifications
Manufacturer:
Package:
TO-252-2L
Drain to Source Voltage:
68V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
139pF
Number:
1 N-channel
Output Capacitance(Coss):
233pF
Input Capacitance(Ciss):
7.089nF
Pd - Power Dissipation:
86W
Gate Charge(Qg):
110nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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