HUAYI HYG016N10NS1B6
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG016N10NS1B6
Package:
TO-263-6L
Customer #:
Key Attributes:
MOSFET N-CH 100V 322A TO-263-6L
Description:
N-Channel 100V 322A 375W Surface Mount TO-263-6L
Datasheet:
HUAYI HYG016N10NS1B6
Products Specifications
Manufacturer:
Package:
TO-263-6L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
322A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.8mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
227pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.9nF
Pd - Power Dissipation:
375W
Output Capacitance(Coss):
5.35nF
Gate Charge(Qg):
220nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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