HUAYI HYG110N11LS1C2
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG110N11LS1C2
Package:
PDFN-8(4.9x5.8)
Customer #:
Key Attributes:
MOSFET N-CH 115V 60A PDFN-8(4.9x5.8)
Description:
N-Channel 115V 60A 71.4W Surface Mount PDFN-8(4.9x5.8)
Datasheet:
HUAYI HYG110N11LS1C2
Products Specifications
Manufacturer:
Package:
PDFN-8(4.9x5.8)
Drain to Source Voltage:
115V
Current - Continuous Drain(Id):
60A
RDS(on):
19mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.606nF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
45.5nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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