HUAYI HYG080N10LS1C2
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG080N10LS1C2
Package:
PDFN5x6-8L
Customer #:
Key Attributes:
MOSFET N-CH 100V 65A PDFN5x6-8L
Description:
N-Channel 100V 65A 71W Surface Mount PDFN5x6-8L
Datasheet:
HUAYI HYG080N10LS1C2
Products Specifications
Manufacturer:
Package:
PDFN5x6-8L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
1 N-channel
Output Capacitance(Coss):
755pF
Pd - Power Dissipation:
71W
Input Capacitance(Ciss):
2.07nF
Gate Charge(Qg):
30.2nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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