HUAYI HYG028N10NS1B6
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG028N10NS1B6
Package:
TO-263-6
Customer #:
Key Attributes:
MOSFET N-CH 100V 230A TO-263-6
Description:
N-Channel 100V 230A 300W Surface Mount TO-263-6
Datasheet:
HUAYI HYG028N10NS1B6
Products Specifications
Manufacturer:
Package:
TO-263-6
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 N-channel
Output Capacitance(Coss):
3.454nF
Input Capacitance(Ciss):
10.32nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
176nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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