HUAYI HYG053N10NS1B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG053N10NS1B
Package:
TO-263-2L
Customer #:
Key Attributes:
MOSFET N-CH 100V 120A TO-263-2L
Description:
N-Channel 100V 120A 187.5W Surface Mount TO-263-2L
Datasheet:
HUAYI HYG053N10NS1B
Products Specifications
Manufacturer:
Package:
TO-263-2L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.036nF@25V
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
70nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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