onsemi HGTP5N120BND
Manufacturer:
onsemi
Mfr. Part #:
HGTP5N120BND
Package:
TO-220AB
Customer #:
Key Attributes:
IGBT 1.2kV 21A TO-220AB
Description:
IGBT NPT (Non-Punch Through) 1.2kV 21A 167W Through Hole TO-220AB
Datasheet:
onsemi HGTP5N120BND
Products Specifications
Manufacturer:
Package:
TO-220AB
Td(off):
160ns
Pd - Power Dissipation:
167W
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@45uA
Gate Charge(Qg):
53nC
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
65ns
Switching Energy(Eoff):
450uJ
Turn-On Energy (Eon):
600uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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