HUAYI HY1920B

Name: HUAYI HY1920B
Brand: HUAYI

Manufacturer: HUAYI Asian Brands

Mfr. Part #: HY1920B

Package: TO-263-2L

Customer #:

Key Attributes: MOSFET N-CH 200V 72A TO-263-2L

Description: N-Channel 200V 72A 268W Surface Mount TO-263-2L

Datasheet: HUAYI HY1920B

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

HUAYI

Package:

TO-263-2L

Drain to Source Voltage:

200V

Current - Continuous Drain(Id):

72A

RDS(on):

22mΩ@10V,45A

Operating Temperature -:

-55℃~+175℃

Gate Threshold Voltage (Vgs(th)):

2.8V

Reverse Transfer Capacitance (Crss@Vds):

257pF

Number:

1 N-channel

Pd - Power Dissipation:

268W

Input Capacitance(Ciss):

5.558nF

Gate Charge(Qg):

127nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	1000
Sales Unit	Piece

Compliance & Export Codes

Type	Details
RoHS
ECCN	-
CNHTS	8541290000
USHTS	8541290095
TARIC	8541290000
CAHTS	8541290000
BRHTS	85412910
INHTS	85412900
MXHTS	8541.29.99

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HUAYI

323 Products

Asian Brand

HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.

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