HUAYI HYG030N03LQ1B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG030N03LQ1B
Package:
TO-263-2L
Customer #:
Key Attributes:
N-Channel Enhancement Mode MOSFET
Description:
30V 100A 1.3V@250uA 1 N-channel 75W TO-263-2L Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG030N03LQ1B
Products Specifications
Manufacturer:
Package:
TO-263-2L
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
2.8mΩ@10V;3.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
303pF
Number:
1 N-channel
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
1.986nF
Output Capacitance(Coss):
315pF
Gate Charge(Qg):
57.9nC@10V;31.3nC@4.5V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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