HUAYI HYG200N12NS1P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG200N12NS1P
Package:
TO-220FB-3
Customer #:
Key Attributes:
MOSFET N-CH 120V 60A TO-220FB-3
Description:
N-Channel 120V 60A 125W Through Hole TO-220FB-3
Datasheet:
HUAYI HYG200N12NS1P
Products Specifications
Manufacturer:
Package:
TO-220FB-3
Drain to Source Voltage:
120V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
327pF
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
2.35nF
Gate Charge(Qg):
33.1nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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