HUAYI HYG055N08NS1P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG055N08NS1P
Package:
TO-220FB-3
Customer #:
Key Attributes:
MOSFET N-CH 80V 120A TO-220FB-3
Description:
N-Channel 80V 120A 187.5W Through Hole TO-220FB-3
Datasheet:
HUAYI HYG055N08NS1P
Products Specifications
Manufacturer:
Package:
TO-220FB-3
Drain to Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.66nF@25V
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
60nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
Recommended Products