HUAYI HYG023N04LQ1P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG023N04LQ1P
Package:
TO-220FB
Customer #:
Key Attributes:
MOSFET N-CH 40V 170A TO-220FB
Description:
N-Channel 40V 170A 166W Through Hole TO-220FB
Datasheet:
HUAYI HYG023N04LQ1P
Products Specifications
Manufacturer:
Package:
TO-220FB
Drain to Source Voltage:
40V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Input Capacitance(Ciss):
9.832nF@0V
Pd - Power Dissipation:
166W
Gate Charge(Qg):
173.7nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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