HUAYI HYG050N13NS1P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG050N13NS1P
Package:
TO-220FB-3L
Customer #:
Key Attributes:
N-Channel Enhancement Mode MOSFET
Description:
135V 200A 4mΩ@10V 3V@250uA 1 N-channel 375W TO-220FB-3L Single FETs, MOSFETs RoHS
Datasheet:
HUAYI HYG050N13NS1P
Products Specifications
Manufacturer:
Package:
TO-220FB-3L
Drain to Source Voltage:
135V
Current - Continuous Drain(Id):
200A
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 N-channel
Pd - Power Dissipation:
375W
Output Capacitance(Coss):
905pF
Input Capacitance(Ciss):
11.687nF
Gate Charge(Qg):
165nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 20 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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