HUAYI HYG043N10NS2B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG043N10NS2B
Package:
TO-263-2L
Customer #:
Key Attributes:
MOSFET N-CH 100V 164A TO-263-2L
Description:
N-Channel 100V 164A 258.6W Surface Mount TO-263-2L
Datasheet:
HUAYI HYG043N10NS2B
Products Specifications
Manufacturer:
Package:
TO-263-2L
Configuration:
-
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
164A
Operating Temperature -:
-
RDS(on):
4.8mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
196pF
Number:
1 N-channel
Output Capacitance(Coss):
2.234nF
Pd - Power Dissipation:
258.6W
Input Capacitance(Ciss):
6.236nF
Gate Charge(Qg):
100nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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