HUAYI HYG180N10LS1P
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG180N10LS1P
Package:
TO-220FB-3
Customer #:
Key Attributes:
MOSFET N-CH 100V 50A TO-220FB-3
Description:
N-Channel 100V 50A 93.7W Through Hole TO-220FB-3
Datasheet:
HUAYI HYG180N10LS1P
Products Specifications
Manufacturer:
Package:
TO-220FB-3
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
34mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22.8pF
Number:
1 N-channel
Output Capacitance(Coss):
476pF
Input Capacitance(Ciss):
1.606nF
Pd - Power Dissipation:
93.7W
Gate Charge(Qg):
24.6nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
Recommended Products
HYG060N08NS1B
80V 105A 6mΩ@10V 4V@250uA 1 N-channel 125W TO-263-2 Single FETs, MOSFETs RoHS
Manufacturer: HUAYI