HUAYI HYG042N10NS1B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG042N10NS1B
Package:
TO-263-2L
Customer #:
Key Attributes:
MOSFET N-CH 100V 160A TO-263-2L
Description:
N-Channel 100V 160A 200W Surface Mount TO-263-2L
Datasheet:
HUAYI HYG042N10NS1B
Products Specifications
Manufacturer:
Package:
TO-263-2L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Output Capacitance(Coss):
2.506nF
Input Capacitance(Ciss):
7.04nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
119nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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