HUAYI HYG180N10LS1D
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG180N10LS1D
Package:
TO-252-2L
Customer #:
Key Attributes:
MOSFET N-CH 100V 45A TO-252-2L
Description:
N-Channel 100V 45A 71.4W Surface Mount TO-252-2L
Datasheet:
HUAYI HYG180N10LS1D
Products Specifications
Manufacturer:
Package:
TO-252-2L
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+175℃
RDS(on):
30mΩ@6V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24.3pF
Number:
1 N-channel
Output Capacitance(Coss):
474pF
Input Capacitance(Ciss):
1.59nF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
24.7nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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