Infineon IRGR3B60KD2TRP
Manufacturer:
Infineon
Mfr. Part #:
IRGR3B60KD2TRP
Package:
DPAK
Customer #:
Key Attributes:
Insulated Gate Bipolar Transistor with Ultra Fast Soft Recovery Diode
Description:
52W 600V NPT (Non-Punch Through) DPAK Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
DPAK
Td(off):
110ns
Pd - Power Dissipation:
52W
Td(on):
18ns
Operating Temperature:
-55℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
6.6pF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.5V@250uA
Gate Charge(Qg):
13nC@15V
Reverse Recovery Time(trr):
77ns
Switching Energy(Eoff):
39uJ
Turn-On Energy (Eon):
62uJ
Input Capacitance(Cies):
-
Pulsed Current- Forward(Ifm):
15.6A
Output Capacitance(Coes):
23pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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Infineon
9502 Products
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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