Infineon IKW25T120
Manufacturer:
Infineon
Mfr. Part #:
IKW25T120
Package:
TO-247-3
Customer #:
Key Attributes:
TrenchStop and Fieldstop technology IGBT with anti-parallel Emitter Controlled HE diode
Description:
190W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-247-3
Td(off):
560ns
Pd - Power Dissipation:
190W
Td(on):
50ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
82pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
155nC@15V
Reverse Recovery Time(trr):
200ns
Switching Energy(Eoff):
2.2mJ
Turn-On Energy (Eon):
2mJ
Input Capacitance(Cies):
1.86nF
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
96pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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Infineon
9502 Products
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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