Infineon IGD03N120S7ATMA1
Manufacturer:
Infineon
Mfr. Part #:
IGD03N120S7ATMA1
Package:
TO-252-3
Customer #:
Description:
45W 1.2kV TO-252-3 Single IGBTs RoHS
Products Specifications
Manufacturer:
Package:
TO-252-3
Pd - Power Dissipation:
45W
Td(off):
89ns
Td(on):
19ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
2pF
Input Capacitance(Cies):
500pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@0.06mA
Gate Charge(Qg):
24nC@15V
Output Capacitance(Coes):
18pF
Switching Energy(Eoff):
160uJ
Turn-On Energy (Eon):
210uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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Infineon
9502 Products
On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.
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