ST STGYA50H120DF2
Manufacturer:
ST
Mfr. Part #:
STGYA50H120DF2
Package:
TO-247
Customer #:
Key Attributes:
IGBT 1.2kV 100A TO-247
Description:
IGBT FS (Field Stop) 1.2kV 100A 535W Through Hole TO-247
Datasheet:
ST STGYA50H120DF2
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
284ns
Pd - Power Dissipation:
535W
Operating Temperature:
-55℃~+175℃@(Tj)
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
104pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@2mA
Gate Charge(Qg):
210nC
Reverse Recovery Time(trr):
340ns
Switching Energy(Eoff):
2.1mJ
Turn-On Energy (Eon):
2mJ
Input Capacitance(Cies):
4.15nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
288pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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