ST STGWA50H65DFB2
Manufacturer:
ST
Mfr. Part #:
STGWA50H65DFB2
Package:
TO-247
Customer #:
Key Attributes:
IGBT 650V 86A TO-247
Description:
IGBT 650V 86A 272W Through Hole TO-247
Datasheet:
ST STGWA50H65DFB2
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
115ns
Pd - Power Dissipation:
272W
Operating Temperature:
-55℃~+175℃
Td(on):
28ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
2.928nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
151nC@15V
Reverse Recovery Time(trr):
92ns
Switching Energy(Eoff):
580uJ
Turn-On Energy (Eon):
910uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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