ST STGW60H65DFB-4
Manufacturer:
ST
Mfr. Part #:
STGW60H65DFB-4
Package:
TO-247-4
Customer #:
Key Attributes:
Trench gate field-stop 650 V, 60 A high speed HB series IGBT
Description:
375W 650V TO-247-4 Single IGBTs RoHS
Datasheet:
ST STGW60H65DFB-4
Products Specifications
Manufacturer:
Package:
TO-247-4
Pd - Power Dissipation:
375W
Td(off):
281ns
Td(on):
65ns
Operating Temperature:
-55℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
158nF
Input Capacitance(Cies):
7.792uF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
262nF
Reverse Recovery Time(trr):
60ns
Switching Energy(Eoff):
1.161mJ
Turn-On Energy (Eon):
346uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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