ST STGWA8M120DF3
Manufacturer:
ST
Mfr. Part #:
STGWA8M120DF3
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss
Description:
167W 1.2kV TO-247 Single IGBTs RoHS
Datasheet:
ST STGWA8M120DF3
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
126ns
Pd - Power Dissipation:
167W
Operating Temperature:
-55℃~+175℃
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
21pF
Input Capacitance(Cies):
542pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@500uA
Pulsed Current- Forward(Ifm):
32A
Output Capacitance(Coes):
74.4pF
Reverse Recovery Time(trr):
103ns
Switching Energy(Eoff):
370uJ
Turn-On Energy (Eon):
390uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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