ST STGW80H65DFB
Manufacturer:
ST
Mfr. Part #:
STGW80H65DFB
Package:
TO-247
Customer #:
Key Attributes:
IGBT 650V 120A TO-247
Description:
IGBT FS (Field Stop) 650V 120A 469W Through Hole TO-247
Datasheet:
ST STGW80H65DFB
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
280ns
Pd - Power Dissipation:
469W
Td(on):
84ns
Operating Temperature:
-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
215pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
414nC
Reverse Recovery Time(trr):
85ns
Switching Energy(Eoff):
1.5mJ
Turn-On Energy (Eon):
2.1mJ
Input Capacitance(Cies):
10.524nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
385pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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