ST STGW25M120DF3
Manufacturer:
ST
Mfr. Part #:
STGW25M120DF3
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Description:
375W 1.2kV TO-247 Single IGBTs RoHS
Datasheet:
ST STGW25M120DF3
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
150ns
Pd - Power Dissipation:
375W
Operating Temperature:
-55℃~+175℃
Td(on):
28ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
65pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
85nC@960V
Reverse Recovery Time(trr):
265ns
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
850uJ
Input Capacitance(Cies):
1.55nF
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
180pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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