ST STGW80H65DFB-4
Manufacturer:
ST
Mfr. Part #:
STGW80H65DFB-4
Package:
TO-247-4
Customer #:
Key Attributes:
IGBT 650V 120A TO-247-4
Description:
IGBT FS (Field Stop) 650V 120A 469W Through Hole TO-247-4
Datasheet:
ST STGW80H65DFB-4
Products Specifications
Manufacturer:
Package:
TO-247-4
Td(off):
336ns
Pd - Power Dissipation:
469W
Td(on):
75ns
Operating Temperature:
-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
215pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
414nC
Reverse Recovery Time(trr):
112ns
Switching Energy(Eoff):
1.7mJ
Turn-On Energy (Eon):
1mJ
Input Capacitance(Cies):
10.524nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
385pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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