ST STGP4M65DF2
Manufacturer:
ST
Mfr. Part #:
STGP4M65DF2
Package:
TO-220
Customer #:
Key Attributes:
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Description:
68W 650V TO-220 Single IGBTs RoHS
Datasheet:
ST STGP4M65DF2
Products Specifications
Manufacturer:
Package:
TO-220
Pd - Power Dissipation:
68W
Td(off):
86ns
Operating Temperature:
-55℃~+175℃
Td(on):
12ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
8pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@250uA
Gate Charge(Qg):
15.2nC@15V
Reverse Recovery Time(trr):
133ns
Switching Energy(Eoff):
136uJ
Turn-On Energy (Eon):
40uJ
Input Capacitance(Cies):
369pF
Pulsed Current- Forward(Ifm):
16A
Output Capacitance(Coes):
24.8pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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