ST STGP10H60DF
Manufacturer:
ST
Mfr. Part #:
STGP10H60DF
Package:
TO-220
Customer #:
Key Attributes:
Trench gate field-stop 600 V, 10 A high speed H series IGBT
Description:
115W 600V TO-220 Single IGBTs RoHS
Datasheet:
ST STGP10H60DF
Products Specifications
Manufacturer:
Package:
TO-220
Td(off):
103ns
Pd - Power Dissipation:
115W
Td(on):
19.5ns
Operating Temperature:
-55℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
30pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@250uA
Gate Charge(Qg):
57nC@15V
Reverse Recovery Time(trr):
107ns
Switching Energy(Eoff):
140uJ
Turn-On Energy (Eon):
83uJ
Input Capacitance(Cies):
1.3nF
Pulsed Current- Forward(Ifm):
40A
Output Capacitance(Coes):
60pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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