ST STGWA15M120DF3
Manufacturer:
ST
Mfr. Part #:
STGWA15M120DF3
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Description:
259W 1.2kV TO-247 Single IGBTs RoHS
Datasheet:
ST STGWA15M120DF3
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
122ns
Pd - Power Dissipation:
259W
Operating Temperature:
-55℃~+175℃
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
38pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@500uA
Gate Charge(Qg):
53nC@15V
Reverse Recovery Time(trr):
270ns
Switching Energy(Eoff):
850uJ
Turn-On Energy (Eon):
550uJ
Input Capacitance(Cies):
985pF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
118pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 600 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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