ST STGWA75H65DFB2
Manufacturer:
ST
Mfr. Part #:
STGWA75H65DFB2
Package:
TO-247
Customer #:
Key Attributes:
IGBT 650V 115A TO-247
Description:
IGBT FS (Field Stop) 650V 115A 357W Through Hole TO-247
Datasheet:
ST STGWA75H65DFB2
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
100ns
Pd - Power Dissipation:
357W
Td(on):
28ns
Operating Temperature:
-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
117pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
207nC
Reverse Recovery Time(trr):
88ns
Switching Energy(Eoff):
1.05mJ
Turn-On Energy (Eon):
1.428mJ
Input Capacitance(Cies):
4.357nF
Pulsed Current- Forward(Ifm):
195A
Output Capacitance(Coes):
264pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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