ST STGW20NC60VD
Manufacturer:
ST
Mfr. Part #:
STGW20NC60VD
Package:
TO-247
Customer #:
Key Attributes:
IGBT 600V 60A TO-247
Description:
IGBT 600V 60A 200W Through Hole TO-247
Datasheet:
ST STGW20NC60VD
Products Specifications
Manufacturer:
Package:
TO-247
Td(off):
100ns
Pd - Power Dissipation:
200W
Td(on):
31ns
Operating Temperature:
-55℃~+150℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
50pF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.75V@250uA
Gate Charge(Qg):
100nC@15V
Reverse Recovery Time(trr):
44ns
Switching Energy(Eoff):
330uJ
Turn-On Energy (Eon):
220uJ
Input Capacitance(Cies):
2.2nF
Output Capacitance(Coes):
225pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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