luxin-semi YGW50N65F1A
Manufacturer:
luxin-semi
Asian Brands
Mfr. Part #:
YGW50N65F1A
Package:
TO-247
Customer #:
Key Attributes:
IGBT 650V 50A TO-247
Description:
IGBT 650V 50A Through Hole TO-247
Datasheet:
luxin-semi YGW50N65F1A
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
312W
Td(off):
180ns
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
75pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
180nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
1.9mJ
Input Capacitance(Cies):
2.8nF
Output Capacitance(Coes):
130pF
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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luxin-semi
35 Products
Shanghai Luxin Electronic Technology Co., Ltd. was established in May 2017. It is a high-tech enterprise specializing in the research and development, production, application and sales of power semiconductors. After several years of industry accumulation, the company has innovative semiconductor core technology, world-class design capabilities, and process development technology, and brings together outstanding returnees and outstanding local teams. The products cover IGBT, SGT/SJMOSFET, SiC, and other power devices of multiple voltage segments, and provide system solutions for various sub-application fields.
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