HXY MOSFET NTH4L027N65S3F-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
NTH4L027N65S3F-HXY
Package:
TO-247-4L
Customer #:
Key Attributes:
SiC Power MOSFET N-Channel Enhancement Mode
Description:
650V 97A 429W Through Hole TO-247-4L
Datasheet:
HXY MOSFET NTH4L027N65S3F-HXY
Products Specifications
Manufacturer:
Package:
TO-247-4L
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
97A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
33pF
Input Capacitance(Ciss):
3.28nF
Output Capacitance(Coss):
359pF
Pd - Power Dissipation:
429W
Gate Charge(Qg):
172nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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Manufacturer: HXY MOSFET