HXY MOSFET HIGLD60R190D1
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
HIGLD60R190D1
Package:
DFN-8(8x8)
Customer #:
Key Attributes:
650V GaN-on-Silicon Enhancement-mode Power Transistor
Description:
10A 160mΩ@6V 1.6V 75W DFN-8(8x8) Single FETs, MOSFETs RoHS
Datasheet:
HXY MOSFET HIGLD60R190D1
Products Specifications
Manufacturer:
Package:
DFN-8(8x8)
Drain to Source Voltage:
-
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
160mΩ@6V
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
-
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
75W
Gate Charge(Qg):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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